tlwr962. document number 83287 rev. 1.2, 30-nov-04 vishay semiconductors www.vishay.com 1 19232 e3 pb pb-free telux? description the telux? series is a clear, non diffused led for applications where supreme luminous flux is required. it is designed in an industry standard 7.62 mm square package utilizing highly de veloped with super bright, allngap, oma technology. the supreme heat dissipation of telux? allows applications at high ambient temperatures. all packing units are binned for luminous flux, forward voltage and color to achieve the most homogenous light appearance in application. sae and ece color requir ements for automobile application are available for color red. esd resistivity 2 kv (hbm) according to mil std 883d, method 3015.7. features utilizing one of the worl d?s brightest (as) allngap technologies (oma) high luminous flux supreme heat dissipation: r thjp is 90 k/w high operating temperature: t amb = - 40 to + 110 c meets sae and ece co lor requirem ents for the automobile indu stry for color red packed in tubes for automatic insertion luminous flux, forward voltage and color categorized for each tube small mechanical tolerances allow precise usage of external reflectors or lightguides lead-free device applications exterior lighting tail-, stop - and turn signals of motor vehicles replaces small incandescent lamps traffic signals and signs parts table part color, luminous intensity angle of half intensity ( ? ) technology TLWR9620 red, v > 3000 mlm 30 allngap on gaas tlwr9621 red, v > 3500 mlm 30 allngap on gaas tlwr9622 red, v > 4000 mlm 30 allngap on gaas
www.vishay.com 2 document number 83287 rev. 1.2, 30-nov-04 vishay tlwr962. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlwr962. optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlwr962. forward voltage classification parameter test condition symbol value unit reverse voltage i r = 100 av r 10 v dc forward current t amb 85 c i f 70 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 85 c p v 190 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 110 c storage temperature range t stg - 55 to + 110 c soldering temperature t 5 s, 1.5 mm from body preheat temperature 100 c/ 30 sec. t sd 260 c thermal resistance junction/ ambient with cathode heatsink of 70 mm 2 r thja 200 k/w parameter test condition part symbol min ty p. max unit total flux i f = 70 ma, r thja = 200 k/w TLWR9620 v 3000 3700 mlm tlwr9621 v 3500 4200 mlm tlwr9622 v 4000 5000 mlm luminous intensity/total flux i f = 70 ma, r thja = 200 k/w i v / v 0.8 mcd/ mlm dominant wavelength i f = 70 ma, r thja = 200 k/w d 611 615 634 nm peak wavelength i f = 70 ma, r thja = 200 k/w p 624 nm angle of half intensity i f = 70 ma, r thja = 200 k/w ? 30 deg total included angle 90 % of total flux captured ? 0.9v 75 deg forward voltage i f = 70 ma, r thja = 200 k/w v f 1.83 2.5 3.03 v reverse voltage i r = 100 av r 10 20 v temperature coefficient < d i f = 70 ma tc d 17 nm/k temperature coefficient v f i f = 70 ma, t > - 25 c tc vf - 2.9 mv/k group forward voltage (v) min max y 1.83 2.07 z 1.95 2.19 0 2.07 2.31 1 2.19 2.43 2 2.31 2.55 3 2.43 2.67 4 2.55 2.79 5 2.67 2.91 6 2.79 3.03
vishay tlwr962. document number 83287 rev. 1.2, 30-nov-04 vishay semiconductors www.vishay.com 3 color classification luminous flux classification typical characteris tics (tamb = 25 c unless otherwise specified) group dominant wavelength (nm) min max 1 611 618 2 614 622 3 616 624 group luminous intensity (mlm) min max f 3000 4200 g 3500 4800 h 4000 6100 i 5000 7300 k 6000 9700 figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 25 50 75 100 125 150 175 200 0 20406080100120 t amb C ambient temperature ( q c ) 15982 p C power dissipation ( mw ) v r thja =200k/w red 0 20 40 60 80 100 0 20406080100120 t amb C ambient temperature ( q c ) 15983 i C forward current ( ma ) f r thja =200k/w red figure 3. forward current vs. pulse length figure 4. rel. luminous intensity vs. angular displacement or 60 emission angle 0.00 0.02 0.04 0.06 0.08 0.10 0.12 t p pulse length (ms) i forward current (a) f 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 0.005 0.05 0.5 16731 16006 0 . 40 . 200 . 20 . 4 0 . 6 0 . 6 0 . 9 0 30 10 20 40 50 60 70 80 1 . 0 0 . 8 0 . 7 i C re l ati v e l uminous intensit y v re l
www.vishay.com 4 document number 83287 rev. 1.2, 30-nov-04 vishay tlwr962. vishay semiconductors figure 5. percentage total luminous flux vs. total included angle for 60 emission angle figure 6. thermal resistance junction ambient vs. cathode padsize 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 tota l in cl uded an gl e (de g rees) 16005 % tota ll uminous f l u x r in k/w 160 170 180 190 200 210 220 230 0 50 100 150 200 250 300 cathode padsi z einmm 2 16009 thja padsi z e8mm 2 per anode pin
vishay tlwr962. document number 83287 rev. 1.2, 30-nov-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 16004
www.vishay.com 6 document number 83287 rev. 1.2, 30-nov-04 vishay tlwr962. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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